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KRF7503 - Power MOSFET

Key Features

  • Generation V Technology Ulrtra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile ( 1.1mm) Available in Tape & Reel Fast Switching ICIC Absolute Maximum Ratings Ta = 25 Parameter Continuous Drain Current, VGS @ 10V,Ta = 25 Continuous Drain Current, VGS @ 10V,TA = 70 Pulsed Drain Current.
  • 1 Power Dissipation Ta = 25.
  • 1 Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt.
  • 1 Junction and Storage Temperature Range Junction-to-Ambient.
  • 2.

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SMD Type HEXFET Power MOSFET KRF7503 Features Generation V Technology Ulrtra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile ( 1.1mm) Available in Tape & Reel Fast Switching ICIC Absolute Maximum Ratings Ta = 25 Parameter Continuous Drain Current, VGS @ 10V,Ta = 25 Continuous Drain Current, VGS @ 10V,TA = 70 Pulsed Drain Current*1 Power Dissipation Ta = 25 *1 Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt*1 Junction and Storage Temperature Range Junction-to-Ambient *2 * ISD 1.7A, di/dt 120A/ s, VDD V(BR)DSS,TJ *2 Surface mounted on FR-4 board, t 10sec. Symbol ID ID IDM PD VGS dv/dt TJ, TSTG R JA 150 Rating 2.4 1.9 14 1.25 10 12 5 -55 to + 150 100 Unit A W mW/ V V/ns /W www.kexin.com.