KRF7530 Datasheet | Kexin Semiconductor

Features Trench Technology Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile ( 1.1mm) Available in Tape & Reel ICIC Absolute Maximum Ratings Ta = 25 Parameter Symbol Drain- Source Voltage Continuous Drain Current, VGS @ 4.5V,Ta = 25 Continuous Drain Current, VGS @ 4.5V,TA = 70 Pulsed Drain Current- 1 Power Dissipation Ta = 25 Power Dissipation Ta = 70 Linear Derating Factor Single Pulse Avalanche Energy - 2 Gate-to-Source Voltage Junction and Storage Temperature Range TJ, TSTG Junction-to-Ambient - 1 R JA 1- Surface mounted on FR-4 board, t 10sec. - 2 Starting TJ = 25 , L = 2.6m H,RG = 25 , IAS = 5.0A. Rating 20 5.4 4.3 40 1.3 0.8 10 33 12 -55 to + 150 100 Unit A W m W/ m J V /W .kexin..cn 1 SMD...