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KRF7555 - Power MOSFET

Key Features

  • Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile ( 1.1mm) Available in Tape & Reel ICIC Absolute Maximum Ratings Ta = 25 Parameter Symbol Drain-Source Voltage VDS Continuous Drain Current, VGS @ -4.5V @ TA = 25 ID Continuous Drain Current, VGS @ -4.5V @ TA = 70 ID Pulsed Drain Current.
  • 1 IDM Power Dissipation.
  • 2 @TA= 25 PD Power Dissipation.
  • 2 @TA= 70 Linear Derating Factor Gate-to-Source Voltage VGS Single Pulse.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD Type HEXFET Power MOSFET KRF7555 Features Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile ( 1.1mm) Available in Tape & Reel ICIC Absolute Maximum Ratings Ta = 25 Parameter Symbol Drain-Source Voltage VDS Continuous Drain Current, VGS @ -4.5V @ TA = 25 ID Continuous Drain Current, VGS @ -4.5V @ TA = 70 ID Pulsed Drain Current *1 IDM Power Dissipation *2 @TA= 25 PD Power Dissipation *2 @TA= 70 Linear Derating Factor Gate-to-Source Voltage VGS Single Pulse Avalanche Energy*2 EAS Peak Diode Recovery dv/dt *3 dv/dt Junction and Storage Temperature Range TJ, TSTG Maximum Junction-to-Ambient *2 R JA *1 Repetitive rating; pulse width limited by max. junction temperature.