KRF7555 Datasheet | Kexin Semiconductor

Features Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile ( 1.1mm) Available in Tape & Reel ICIC Absolute Maximum Ratings Ta = 25 Parameter Symbol Drain-Source Voltage Continuous Drain Current, VGS @ -4.5V @ TA = 25 Continuous Drain Current, VGS @ -4.5V @ TA = 70 Pulsed Drain Current - 1 Power Dissipation - 2 @TA= 25 Power Dissipation - 2 @TA= 70 Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy- 2 Peak Diode Recovery dv/dt - 3 dv/dt Junction and Storage Temperature Range TJ, TSTG Maximum Junction-to-Ambient - 2 R JA - 1 Repetitive rating; pulse width limited by max. junction temperature. - 2 Surface mounted on FR-4 board, t 10sec - 3 ISD -2.0A, di/dt -140A/ s, VDD V(BR)DSS,TJ 150 Rating -20 -4.3 -3.4 -34 1.25 0.8 10 12 36 1.1 -55 to + 150...