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KRF7756 - Power MOSFET

Key Features

  • Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile ( 1.2mm) Available in Tape & Reel TSSOP-8 Unit: mm 1,5,8: Drain 2,3,6,7: Source 4: Gate Absolute Maximum Ratings Ta = 25 Parameter Symbol Drain- Source Voltage VDS Continuous Drain Current, VGS @ -4.5V @ TA = 25 ID Continuous Drain Current, VGS @ -4.5V @ TA = 70 ID Pulsed Drain Current.
  • 1 IDM Power Dissipation.
  • 2 @TA= 25 PD Power Dissipation.
  • 2 @TA = 70 PD Linear Derating Factor Ga.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD Type ICIC HEXFET Power MOSFET KRF7756 Features Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile ( 1.2mm) Available in Tape & Reel TSSOP-8 Unit: mm 1,5,8: Drain 2,3,6,7: Source 4: Gate Absolute Maximum Ratings Ta = 25 Parameter Symbol Drain- Source Voltage VDS Continuous Drain Current, VGS @ -4.5V @ TA = 25 ID Continuous Drain Current, VGS @ -4.5V @ TA = 70 ID Pulsed Drain Current *1 IDM Power Dissipation *2 @TA= 25 PD Power Dissipation *2 @TA = 70 PD Linear Derating Factor Gate-to-Source Voltage VGS Junction and Storage Temperature Range TJ, TSTG Maximum Junction-to-Ambient *2 R JA *1 Repetitive rating; pulse width limited by max. junction temperature. *2 Surface mounted on FR-4 board, 10sec Rating -12 -4.3 -3.5 -17 1.