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NDT90N04 - N-Channel MOSFET

Features

  • ƽ VDS = 40V; ID = 120A ƽ RDS(ON) ˘ 3.5m¡ (VGS = 10V) ƽ Ultra Low On-Resistance ƽ High UIS and UIS 100% Test TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 +0 1.50 .15 -0.15 0.80+0.1 -0.1 0.127 m ax +0 5.55 .15 -0.15 3.80 Unit: mm + 2.65 0.25 -0.1 + 0.50 0.15 -0.15 + 1.50 0.28 -0.1 + 0.2 9 .7 0 -0.2 2.3 4 .60 +0.15 -0.15 0.60+ 0.1 - 0.1 1 Gate 2 Drain 3 Source Ƶ Absolute Maximum Ratings Ta = 25ć Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drai.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD Type TraMnOsiSsFtoErsT N-Channel Trench Power MOSFET NDT90N04 Ƶ Features ƽ VDS = 40V; ID = 120A ƽ RDS(ON) ˘ 3.5m¡ (VGS = 10V) ƽ Ultra Low On-Resistance ƽ High UIS and UIS 100% Test TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 +0 1.50 .15 -0.15 0.80+0.1 -0.1 0.127 m ax +0 5.55 .15 -0.15 3.80 Unit: mm + 2.65 0.25 -0.1 + 0.50 0.15 -0.15 + 1.50 0.28 -0.1 + 0.2 9 .7 0 -0.2 2.3 4 .60 +0.15 -0.15 0.60+ 0.1 - 0.1 1 Gate 2 Drain 3 Source Ƶ Absolute Maximum Ratings Ta = 25ć Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) Power Dissipation Single Pulse Avalanche Energy (Note 2) Thermal Resistance.
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