PESD5V0V1BL
Features
ƽ Bidirectional ESD protection of one line ƽ Very low diode capacitance: Cd = 11 p F ƽ Max. peak pulse power: PPP = 45 W ƽ Low clamping voltage: VCL = 12.5 V ƽ Ultra low leakage current: IRM < 1 n A ƽ ESD protection up to 30 k V ƽ IEC 61000-4-2; level 4 (ESD) ƽ IEC 61000-4-5 (surge); IPP = 4.8 A
SOD882
Unit:mm
Ƶ Absolute Maximum Ratings (TA = 25 °C, unless otherwise specified)
Parameter
Symbol
Value
Unit
Peak Pulse Power tp = 8/20 μs
Peak Pulse Current tp = 8/20 μs
IEC 61000-4-2 Contact
Electrostatic Discharge Voltage Machine Model
VESD
MIL-STD-883 HBM Junction and Storage Temperature Range
Tj, Tstg
-55 to +150
ć
Ƶ Electrical Characteristics (Ta = 25ć unless otherwise specified.)
Parameter Reverse standoff voltage Breakdown voltage Reverse leakage current Diode capacitance Clamping voltage
- 1 Dynamic resistance
- 2 Differential resistance
Symbol VRWM VBR
IRM &G VCL rdyn rd i f
Test Conditions
IR= 5m A VRWM = 5 V...
