SI2333CDS
SI2333CDS is P-Channel Enhancement MOSFET manufactured by Kexin Semiconductor.
Features
- VDS (V) =-12V
- ID =-5.1A (VGS =-4.5V)
- RDS(ON) ＜ 35mΩ (VGS =-4.5V)
- RDS(ON) ＜ 45mΩ (VGS =-2.5V)
- RDS(ON) ＜ 59mΩ (VGS =-1.8V)
G1 S2
SOT-23-3
2.9 +0.2 -0.1
0.4 +0.1 -0.1
+0.2 2.8 -0.1
3D
0.95 +0.1 -0.1 1.9 +0.1 -0.2
+0.2 1.6 -0.1
+0.2 1.1 -0.1
Unit: mm
0.15 +0.02 -0.02
1. Gate 2. Source 3. Drain
0-0.1 +0.1 0.68
-0.1
- Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150℃)
- 1 Pulsed Drain Current
Ta = 25℃ Ta = 70℃
Power Dissipation
Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Foot Junction Temperature Storage Temperature Range
Ta = 25℃ Ta = 70℃
- 1 Surface Mounted on 1” x 1” FR4 Board.
Symbol VDS...
