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SI2333CDS - -12V P-ChanneI MOSFET

General Description

SOT-23 1 G GATE 2 S SOURCE 3 D DRAIN 1 2.Applications Load Switch PA Switch 3 D G 2 S 4.Absolute Maximum Ratings TA= 25°C Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Continuous Source-Drain Diode Current TC=25°C

Key Features

  • VDS(V)=-12V Qg=9nC RDS(ON).

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Datasheet Details

Part number SI2333CDS
Manufacturer UMW
File Size 212.34 KB
Description -12V P-ChanneI MOSFET
Datasheet download datasheet SI2333CDS Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UMW SI2333CDS -12V P-ChanneI MOSFET 1.Features VDS(V)=-12V Qg=9nC RDS(ON)<35mΩ(VGS=-4.5V), ID=-5.1A RDS(ON)<45mΩ(VGS=-2.5V), ID=-4.5A RDS(ON)<59mΩ(VGS=-1.8V), ID=-3.9A 3.Pinning information Pin Symbol Description SOT-23 1 G GATE 2 S SOURCE 3 D DRAIN 1 2.Applications Load Switch PA Switch 3 D G 2 S 4.Absolute Maximum Ratings TA= 25°C Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Continuous Source-Drain Diode Current TC=25°C TC=70°C TA=25°C TA=70°C TC=25°C TA=25°C Symbol VDS VGS ID IDM IS Maximum Units -12 V ±8 -7.1 -5.7 -5.1bc -4bc A -20 -1 -0.63bc UTD Semiconductor Co.,Limited www.umw-ic.com Nov.2024 1 of 10 www.umw-ic.