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SI2333DS - P-Channel MOSFET

Key Features

  • s.
  • VDS (V) =-12V.
  • ID =-5.3 A (VGS =-4.5V).
  • RDS(ON) ＜ 32mΩ (VGS =-4.5V).
  • RDS(ON) ＜ 42mΩ (VGS =-2.5V).
  • RDS(ON) ＜ 59mΩ (VGS =-1.8V) G1 S2 3D +0.1 2.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.1 1.3 -0.1 +0.1 0.97 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 1. Gate 2. Source 3. Drain 0-0.1 +0.1 0.38 -0.1.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA = 2.

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SMD Type MOSFET P-Channel MOSFET SI2333DS (KI2333DS) ■ Features ● VDS (V) =-12V ● ID =-5.3 A (VGS =-4.5V) ● RDS(ON) ＜ 32mΩ (VGS =-4.5V) ● RDS(ON) ＜ 42mΩ (VGS =-2.5V) ● RDS(ON) ＜ 59mΩ (VGS =-1.8V) G1 S2 3D +0.1 2.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.1 1.3 -0.1 +0.1 0.97 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 1. Gate 2. Source 3. Drain 0-0.1 +0.1 0.38 -0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA = 25 °C TA = 70 °C Pulsed Drain Current Power Dissipation TA = 25 °C TA = 70 °C Thermal Resistance.Junction- to-Ambient Thermal Resistance.