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LMN2130JZF 20V N-Channel MOSFET
LMN2130JZF
Rev. 1.0
Features
20V/5.4A, RDS(ON)=30mΩ@VGS=4.5V Super high density cell design for extremely
low RDS (ON) Exceptional on-resistance and maximum DC
current capability SOT-23 package design
Product Description
LMN2130JZF, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications.