Datasheet Summary
LMN2130JZF 20V N-Channel MOSFET
Rev. 1.0
Features
- 20V/5.4A, RDS(ON)=30mΩ@VGS=4.5V
- Super high density cell design for extremely low RDS (ON)
- Exceptional on-resistance and maximum DC current capability
- SOT-23 package design
Product Description
LMN2130JZF, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, such as smart phone and notebook puter and other battery powered circuits, and low in-line power loss are needed in mercial industrial surface mount applications.
Applications
- Portable Equipment
- Battery Powered System
- Net...