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LMN2130JZF - 20V N-Channel MOSFET

General Description

LMN2130JZF, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Key Features

  • 20V/5.4A, RDS(ON)=30mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • SOT-23 package design Product.

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Datasheet Details

Part number LMN2130JZF
Manufacturer LFC semi
File Size 490.98 KB
Description 20V N-Channel MOSFET
Datasheet download datasheet LMN2130JZF Datasheet

Full PDF Text Transcription (Reference)

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LMN2130JZF 20V N-Channel MOSFET LMN2130JZF Rev. 1.0 Features  20V/5.4A, RDS(ON)=30mΩ@VGS=4.5V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  SOT-23 package design Product Description LMN2130JZF, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications.