LMN22N10DF Overview
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. LMN22N10DF (TO-252-2L) Applications Networking Load Switch LED applications Description Gate Source Drain LMN22N10DF Notice:.
LMN22N10DF Key Features
- 100V,40A, RDS(ON) =24mΩ@VGS = 10V
- Improved dv/dt capability
- Fast switching
- 100% EAS guaranteed
- Green Device Available
- TO-252-2L package design