LMN22N10SF - 100V N-Channel Enhancement Mode MOSFET

Product Overview

Datasheet Details

Part number	LMN22N10SF
Manufacturer	LFC semi
File Size	552.87 KB
Description	100V N-Channel Enhancement Mode MOSFET
Datasheet	LMN22N10SF Datasheet
Additional preview pages of the LMN22N10SF datasheet.

Product details

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

RDS(ON) = 22mΩ@VGS = 10V.
RDS(ON) = 32mΩ@VGS = 4.5V.
Improved dv/dt capability.
Fast switching.
Green Device Available.
SOP-8 package design These devices are well suited for high efficiency fast switching.

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Published: Jul 15, 2025 |