LMN22N10SF Overview
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. The information in this document is subject to change without notice.
LMN22N10SF Key Features
- RDS(ON) = 22mΩ@VGS = 10V
- RDS(ON) = 32mΩ@VGS = 4.5V
- Improved dv/dt capability
- Fast switching
- Green Device Available
- SOP-8 package design