Datasheet4U Logo Datasheet4U.com

LMN22N10SF - 100V N-Channel Enhancement Mode MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • RDS(ON) = 22mΩ@VGS = 10V.
  • RDS(ON) = 32mΩ@VGS = 4.5V.
  • Improved dv/dt capability.
  • Fast switching.
  • Green Device Available.
  • SOP-8 package design These devices are well suited for high efficiency fast switching.

📥 Download Datasheet

Datasheet Details

Part number LMN22N10SF
Manufacturer LFC semi
File Size 552.87 KB
Description 100V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet LMN22N10SF Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
LMN200B01 200mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND N-MOSFET DIODES
LMN200B02 200mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND N-MOSFET DIODES
LMN1A SILICON RECTIFIER DIODES EIC
LMN1B SILICON RECTIFIER DIODES EIC
LMN1D SILICON RECTIFIER DIODES EIC

Other Datasheets by LFC semi

Part Number Description
LMN22N10DF 100V N-Channel MOSFET
LMN22N10XF 100V N-Channel MOSFET
LMN2130JZF 20V N-Channel MOSFET
LMN2730EX7F 20V Dual N-Channel MOSFET
LMN02N15TSF 150V N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
LMN22N10SF Rev. 1.0 LMN22N10SF 100V N-Channel Enhancement Mode MOSFET Features ● RDS(ON) = 22mΩ@VGS = 10V ● RDS(ON) = 32mΩ@VGS = 4.5V ● Improved dv/dt capability ● Fast switching ● Green Device Available ● SOP-8 package design These devices are well suited for high efficiency fast switching applications. Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.