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LMN3368ADF - 30V N-Channel Enhancement Mode MOSFET

General Description

The N-Channel enhancement mode power field effect transistor is using trench DMOS technology.

resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • RDS(ON) =6mΩ @ VGS=10V.
  • RDS(ON) =9.8mΩ @ VGS=4.5V.
  • TO-252 Package Product.

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Datasheet Details

Part number LMN3368ADF
Manufacturer LFC semi
File Size 577.32 KB
Description 30V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet LMN3368ADF Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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LMN3368ADF Rev. 1.0 LMN3368ADF 30V N-Channel Enhancement Mode MOSFETs Features  RDS(ON) =6mΩ @ VGS=10V  RDS(ON) =9.8mΩ @ VGS=4.5V  TO-252 Package Product Description The N-Channel enhancement mode power field effect transistor is using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The device is well suited for high efficiency fast switching applications. Applications  MB / VGA / Vcore  POL Applications  SMPS Pin Configuration LMN3368ADF (TO-252) PIN Description 1 Gate 2 Drain 3 Source LMN3368ADF Notice: The information in this document is subject to change without notice. 1 Email:amy@lfc-semi.