Datasheet Summary
Rev. 1.0
LMN3368ADF 30V N-Channel Enhancement Mode MOSFETs
Features
- RDS(ON) =6mΩ @ VGS=10V
- RDS(ON) =9.8mΩ @ VGS=4.5V
- TO-252 Package
Product Description
The N-Channel enhancement mode power field effect transistor is using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.
The device is well suited for high efficiency fast switching applications.
Applications
- MB / VGA / Vcore
- POL Applications
- SMPS
Pin Configuration
LMN3368ADF (TO-252)
Description
Gate
Drain
Source
Not...