LMN3368ADF Overview
The N-Channel enhancement mode power field effect transistor is using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. The device is well suited for high efficiency fast switching applications.
LMN3368ADF Key Features
- RDS(ON) =6mΩ @ VGS=10V
- RDS(ON) =9.8mΩ @ VGS=4.5V
- TO-252 Package