Datasheet Summary
Rev. 1.0
LMN3368AXF 30V N-Channel Enhancement Mode MOSFETs
Features
- RDS(ON) =6mΩ @ VGS=10V
- RDS(ON) =9.8mΩ @ VGS=4.5V
- DFN5x6-8L Package
Product Description
The N-Channel enhancement mode power field effect transistor is using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.
The device is well suited for high efficiency fast switching applications.
Applications
- MB / VGA / Vcore
- POL
- SMPS 2nd SR
Pin Configuration
LMN3368AXF (DFN5x6-8L)
PIN 1,2,3
4 5,6,7,8
Description Source Gate...