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LMN3368AXF - 30V N-Channel Enhancement Mode MOSFET

General Description

The N-Channel enhancement mode power field effect transistor is using trench DMOS technology.

resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • RDS(ON) =6mΩ @ VGS=10V.
  • RDS(ON) =9.8mΩ @ VGS=4.5V.
  • DFN5x6-8L Package Product.

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Datasheet Details

Part number LMN3368AXF
Manufacturer LFC semi
File Size 596.95 KB
Description 30V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet LMN3368AXF Datasheet

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LMN3368AXF Rev. 1.0 LMN3368AXF 30V N-Channel Enhancement Mode MOSFETs Features  RDS(ON) =6mΩ @ VGS=10V  RDS(ON) =9.8mΩ @ VGS=4.5V  DFN5x6-8L Package Product Description The N-Channel enhancement mode power field effect transistor is using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The device is well suited for high efficiency fast switching applications. Applications  MB / VGA / Vcore  POL  SMPS 2nd SR Pin Configuration LMN3368AXF (DFN5x6-8L) PIN 1,2,3 4 5,6,7,8 Description Source Gate Drain LMN3368AXF Notice: The information in this document is subject to change without notice.