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LMN3112DF - 30V N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

MB / VGA / Vcore DC-DC Converters Power Management Functions Pin Configuration LMN3112DF (TO-252-2L) Description Gate Source Drain LMN311

Features

  • 30V, 40A, RDS(ON)=12mΩ@VGS=10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS guaranteed.
  • Green Device Available been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching.

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Datasheet preview – LMN3112DF

Datasheet Details

Part number LMN3112DF
Manufacturer LFC semi
File Size 509.23 KB
Description 30V N-Channel MOSFET
Datasheet download datasheet LMN3112DF Datasheet
Additional preview pages of the LMN3112DF datasheet.

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Full PDF Text Transcription

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LMN3112D Rev. 1.0 LMN3112DF 30V N-Channel MOSFET Features  30V, 40A, RDS(ON)=12mΩ@VGS=10V  Improved dv/dt capability  Fast switching  100% EAS guaranteed  Green Device Available been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
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