Datasheet Summary
LMN3112D
Rev. 1.0
LMN3112DF 30V N-Channel MOSFET
Features
- 30V, 40A, RDS(ON)=12mΩ@VGS=10V
- Improved dv/dt capability
- Fast switching
- 100% EAS guaranteed
- Green Device Available been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.
These devices are well suited for high efficiency fast switching applications.
Product Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has
Applications
- MB / VGA / Vcore
- DC-DC Converters
- Power Management Functions
Pin Configuration
LMN3112DF...