LMN3112DF Overview
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has Applications MB / VGA / Vcore DC-DC Converters Power Management Functions LMN3112DF (TO-252-2L) Description Gate Source Drain LMN3112D Notice: The information in this document is subject to change without notice.
LMN3112DF Key Features
- 30V, 40A, RDS(ON)=12mΩ@VGS=10V
- Improved dv/dt capability
- Fast switching
- 100% EAS guaranteed
- Green Device Available