LMN3112Z Overview
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. The information in this document is subject to change without notice. Ordering Information Part Number LMN3112ZF P/N LMN3112 LMN3112ZF Rev.
LMN3112Z Key Features
- 30V, 12.6A, RDS(ON)=10mΩ@VGS=10V
- Improved dv/dt capability
- Fast switching
- 100% EAS guaranteed
- Green Device Available