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LMN3112S - 30V N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

MB / VGA / Vcore DC-DC Converters Power Management Functions Pin Configuration LMN3112SF (SOP-8L) Pin 1,2,3 4 5,6,7,8 Description Source

Features

  • 30V, 10.6A, RDS(ON)=12mΩ@VGS=10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS guaranteed.
  • Green Device Available been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching.

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Datasheet preview – LMN3112S

Datasheet Details

Part number LMN3112S
Manufacturer LFC semi
File Size 467.78 KB
Description 30V N-Channel MOSFET
Datasheet download datasheet LMN3112S Datasheet
Additional preview pages of the LMN3112S datasheet.

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Full PDF Text Transcription

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LMN3112S Rev. 1.0 LMN3112S 30V N-Channel MOSFET Features  30V, 10.6A, RDS(ON)=12mΩ@VGS=10V  Improved dv/dt capability  Fast switching  100% EAS guaranteed  Green Device Available been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
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