LMN3112S Overview
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. The information in this document is subject to change without notice. Ordering Information Part Number LMN3112SF P/N LMN3112 LMN3112S Rev.
LMN3112S Key Features
- 30V, 10.6A, RDS(ON)=12mΩ@VGS=10V
- Improved dv/dt capability
- Fast switching
- 100% EAS guaranteed
- Green Device Available