Datasheet4U Logo Datasheet4U.com

LMN3112ZF - 30V N-Channel MOSFET

This page provides the datasheet information for the LMN3112ZF, a member of the LMN3112Z 30V N-Channel MOSFET family.

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

MB / VGA / Vcore DC-DC Converters Power Management Functions Pin Configuration LMN3112ZF (DFN3X3-8L) Pin 1,2,3 4 5,6,7,8 Description Sour

Features

  • 30V, 12.6A, RDS(ON)=10mΩ@VGS=10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS guaranteed.
  • Green Device Available been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching.

📥 Download Datasheet

Datasheet preview – LMN3112ZF

Datasheet Details

Part number LMN3112ZF
Manufacturer LFC semi
File Size 461.88 KB
Description 30V N-Channel MOSFET
Datasheet download datasheet LMN3112ZF Datasheet
Additional preview pages of the LMN3112ZF datasheet.

📁 Similar Datasheet

  • LMN1A - SILICON RECTIFIER DIODES (EIC)
  • LMN1B - SILICON RECTIFIER DIODES (EIC)
  • LMN1D - SILICON RECTIFIER DIODES (EIC)
  • LMN1G - SILICON RECTIFIER DIODES (EIC)
  • LMN1J - SILICON RECTIFIER DIODES (EIC)
  • LMN1K - SILICON RECTIFIER DIODES (EIC)
  • LMN1M - SILICON RECTIFIER DIODES (EIC)
  • LMN200B01 - 200mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND N-MOSFET (DIODES)
  • LMN200B02 - 200mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND N-MOSFET (DIODES)
  • LMN400B01 - 400mA LOAD SWITCH FEATURING PNP TRANSISTOR AND N-MOSFET (DIODES)
Other Datasheets by LFC semi

Full PDF Text Transcription

Click to expand full text
LMN3112ZF Rev. 1.0 LMN3112Z 30V N-Channel MOSFET Features  30V, 12.6A, RDS(ON)=10mΩ@VGS=10V  Improved dv/dt capability  Fast switching  100% EAS guaranteed  Green Device Available been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
Published: |