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LMN3112ZF - 30V N-Channel MOSFET

Download the LMN3112ZF datasheet PDF. This datasheet also covers the LMN3112Z variant, as both devices belong to the same 30v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

MB / VGA / Vcore DC-DC Converters Power Management Functions Pin Configuration LMN3112ZF (DFN3X3-8L) Pin 1,2,3 4 5,6,7,8 Description Sour

Key Features

  • 30V, 12.6A, RDS(ON)=10mΩ@VGS=10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS guaranteed.
  • Green Device Available been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (LMN3112Z-LFCsemi.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number LMN3112ZF
Manufacturer LFC semi
File Size 461.88 KB
Description 30V N-Channel MOSFET
Datasheet download datasheet LMN3112ZF Datasheet

Other Datasheets by LFC semi

Part Number Description
LMN3112Z 30V N-Channel MOSFET
LMN3112DF 30V N-Channel MOSFET
LMN3112S 30V N-Channel MOSFET
LMN3112XF 30V N-Channel MOSFET
LMN3106ZF 30V N-Channel MOSFET
LMN3320XF 30V N-Channel MOSFET
LMN3368ADF 30V N-Channel Enhancement Mode MOSFET
LMN3368ASF 30V N-Channel Enhancement Mode MOSFET
LMN3368AXF 30V N-Channel Enhancement Mode MOSFET
LMN3612PJZF 30V N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
LMN3112ZF Rev. 1.0 LMN3112Z 30V N-Channel MOSFET Features  30V, 12.6A, RDS(ON)=10mΩ@VGS=10V  Improved dv/dt capability  Fast switching  100% EAS guaranteed  Green Device Available been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.