LMN3612PJZF Overview
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications.
LMN3612PJZF Key Features
- 30V, 5.3A, RDS(ON)=36mΩ@VGS=4.5V
- Improved dv/dt capability
- Fast switching
- Suit for 2.5V Gate Drive
LMN3612PJZF Applications
- Green Device Available