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LMN3660ETF - 30V N-Channel Enhancement Mode MOSFET

Description

LMN3660E, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

  • Low Gate Charge.
  • ESD Protected.
  • DFN1006-3L package design Product.

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Datasheet preview – LMN3660ETF

Datasheet Details

Part number LMN3660ETF
Manufacturer LFC semi
File Size 613.00 KB
Description 30V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet LMN3660ETF Datasheet
Additional preview pages of the LMN3660ETF datasheet.

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Full PDF Text Transcription

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LMN3660ETF Rev. 1.0 LMN3660ETF 30V N-Channel Enhancement Mode MOSFET Features  Low Gate Charge  ESD Protected  DFN1006-3L package design Product Description LMN3660E, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industrial surface mount applications. Applications  Power Management in Note book  Portable Equipment  Load Switch  Switching circuits Pin Configuration LMN3660 ETF (DFN1006-3L) Transparent top view Pin Description 1 Gate 2 Source 3 Drain LMN3660ETF Notice: The information in this document is subject to change without notice.
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