Datasheet Summary
Rev. 1.0
LMN3660ETF 30V N-Channel Enhancement Mode MOSFET
Features
- Low Gate Charge
- ESD Protected
- DFN1006-3L package design
Product Description LMN3660E, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, such as smart phone and notebook puter, and low in-line power loss are needed in mercial industrial surface mount applications.
Applications
- Power Management in Note book
- Portable Equipment
- Load Switch
- Switching circuits
Pin Configuration
LMN3660 ETF (DFN1006-3L)
Transparent top view
Pin
Description
Gate
Source...