LMN3660ETF Overview
LMN3660E, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook puter, and low in-line power loss are needed in mercial industrial surface mount applications. Applications Power Management in Note book Portable Equipment Load Switch Switching circuits...
LMN3660ETF Key Features
- Low Gate Charge
- ESD Protected
- DFN1006-3L package design
LMN3660ETF Applications
- Power Management in Note book