LMN3660EX7F Overview
LMN3660E, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. voltage power management, such as smart phone and notebook puter, and low in-line power loss are needed in mercial industrial surface mount applications. Applications Power Management in Note book Portable Equipment Load Switch These devices are particularly suited for low LMN3660 EX7F...
LMN3660EX7F Key Features
- Low Gate Charge
- ESD Protected
- SOT-523 package design
LMN3660EX7F Applications
- Power Management in Note book