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LMN3660EAF - 30V N-Channel Enhancement Mode MOSFET

Description

LMN3660E, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • Low Gate Charge.
  • ESD Protected.
  • SOT-723 package design Product.

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Datasheet preview – LMN3660EAF

Datasheet Details

Part number LMN3660EAF
Manufacturer LFC semi
File Size 601.92 KB
Description 30V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet LMN3660EAF Datasheet
Additional preview pages of the LMN3660EAF datasheet.

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Full PDF Text Transcription

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LMN3660EAF Rev. 1.0 LMN3660EAF 30V N-Channel Enhancement Mode MOSFET Features  Low Gate Charge  ESD Protected  SOT-723 package design Product Description LMN3660E, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industrial surface mount applications. Applications  Power Management in Note book  Portable Equipment  Load Switch These devices are particularly suited for low Pin Configuration LMN3660EAF (SOT-723) Pin Description 1 Gate 2 Source 3 Drain LMN3660EAF 1 Notice: The information in this document is subject to change without notice.
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