LMN3660EAF Overview
LMN3660E, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. voltage power management, such as smart phone and notebook puter, and low in-line power loss are needed in mercial industrial surface mount applications. Applications Power Management in Note book Portable Equipment Load Switch These devices are particularly suited for low LMN3660EAF (SOT-723)...
LMN3660EAF Key Features
- Low Gate Charge
- ESD Protected
- SOT-723 package design
LMN3660EAF Applications
- Power Management in Note book