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LMP3825EJZF - 30V P-Channel MOSFET

General Description

MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Key Features

  • -20V/-0.5A, RDS(ON).

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Datasheet Details

Part number LMP3825EJZF
Manufacturer LFC semi
File Size 672.69 KB
Description 30V P-Channel MOSFET
Datasheet download datasheet LMP3825EJZF Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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LMP3825EJZF Rev. 1.0 LMP3825EJZF 30V P-Channel MOSFET Features  -20V/-0.5A, RDS(ON)<2500mΩ@VGS=-4.5V  -20V/-0.2A, RDS(ON)<2900mΩ@VGS=-2.5V  -20V/-0.1A, RDS(ON)<5000mΩ@VGS=-1.8V  Low-Voltage Operation  High-Speed Circuits  ESD Protection  SOT-23 package design Product Description LMP3825EJZF, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industrial surface mount applications.