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LMP3825EJZF
Rev. 1.0
LMP3825EJZF 30V P-Channel MOSFET
Features
-20V/-0.5A, RDS(ON)<2500mΩ@VGS=-4.5V -20V/-0.2A, RDS(ON)<2900mΩ@VGS=-2.5V -20V/-0.1A, RDS(ON)<5000mΩ@VGS=-1.8V Low-Voltage Operation High-Speed Circuits ESD Protection SOT-23 package design
Product Description
LMP3825EJZF, P-Channel enhancement mode
MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industrial surface mount applications.
LMP3825EJZF Datasheet
