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LMP3825EX7F
Rev. 1.0
LMP3825EX7F 30V P-Channel MOSFET
Features
-30V/-0.27A, RDS(ON)<2500mΩ@VGS=-4.5V -30V/-0.27A, RDS(ON)<2900mΩ@VGS=-2.5V -30V/-0.27A, RDS(ON)<5000mΩ@VGS=-1.8V Low-Voltage Operation High-Speed Circuits ESD Protection SOT-523 package design
Product Description
LMP3825EX7F, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide
excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industrial surface mount applications.