LMP3825ETF Overview
LMP3825ETF, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook puter, and low in-line power loss are needed in mercial industrial surface mount applications. Applications Drivers, Relays, Solenoids, Lamps, Hammers Battery Operated Systems Power Supply...
LMP3825ETF Key Features
- 30V/-0.5A, RDS(ON)<2500mΩ@VGS=-4.5V
- 30V/-0.2A, RDS(ON)<2900mΩ@VGS=-2.5V
- 30V/-0.1A, RDS(ON)<5000mΩ@VGS=-1.8V
- Low-Voltage Operation
- High-Speed Circuits
- ESD Protection
- DFN1006-3L package design