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LMP3825ETF
Rev. 1.0
LMP3825ETF 30V P-Channel MOSFET
Features
-30V/-0.5A, RDS(ON)<2500mΩ@VGS=-4.5V -30V/-0.2A, RDS(ON)<2900mΩ@VGS=-2.5V -30V/-0.1A, RDS(ON)<5000mΩ@VGS=-1.8V Low-Voltage Operation High-Speed Circuits ESD Protection DFN1006-3L package design
Product Description
LMP3825ETF, P-Channel enhancement mode MOSFET,
uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industrial surface mount applications.
LMP3825ETF Datasheet
