LGE 2SA1740
PNP Transistor
| Part No. | 2SA1740 |
|---|---|
| Datasheet | 2SA1740 Download |
| Manufacturer |  LGE |
| Description | PNP Transistor |
| Buy | Stock & Price |
FEATURES
High breadown voltage Excellent hFE linearlity Marking: AK 1. BASE 2. COLLECTOR 3. EMITTER 2SA1740 SOT-89 Transistor(PNP) SOT-89 4.6 1.6 1.4 4.4 1.8 1.4 B 2.6 4.25 2.4 3.75 0.44 0.37 0.8 MIN 0.13 B 0.53 0.48 0.35 0.40 2x) 1.5 3.0 Dimensions in inches and (millimeters)MAXIMUM RATINGS
(TA=25℃ unless otherwise noted) Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current -Continuous PC Collector Dissipation TJ Junction Temperature Tstg Storage Temperature Value -400 -400 -5 -200 500 150 -55-150ELECTRICAL CHARACTERISTICS
(Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN Collector-base breakdown voltage V(BR)CBO IC=-10μA,IE=0 -400 Collector-emitter breakdown voltage Emitter-base breakdown voltage V(BR)CEO IC=-1mA,IB=0 V(BR)EBO IE=-10μA,IC=0 -400 -5 Collector cut-off current ICBO VCB=-300V,IE=0 Emitter cut-off current IEBO VEB=-