LGE 2SC3279
NPN Transistor
FEATURES
High DC current gain and excellent hFE linearity Low saturation voltageMAXIMUM RATINGS
(TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 10 V VEBO Emitter-Base Voltage 6V IC Collector Current –Continuous 2 A PC Collector Power Dissipation 750 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ Dimensions in inches and (millimeters)ELECTRICAL CHARACTERISTICS
(Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol Test conditions V(BR)CBO IC=1mA , IE=0 V(BR)CEO IC=10mA, IB=0 V(BR)EBO IE=1mA, IC=0 IC