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3DG536KM - SILICON NPN TRANSISTOR

Download the 3DG536KM datasheet PDF. This datasheet also covers the 3DG536M variant, as both devices belong to the same silicon npn transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (3DG536M-LZG.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 3DG536KM
Manufacturer LZG
File Size 214.45 KB
Description SILICON NPN TRANSISTOR
Datasheet download datasheet 3DG536KM Datasheet

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Other Datasheets by LZG

Part Number Description
3DG536M SILICON NPN TRANSISTOR
3DG1008 SILICON NPN TRANSISTOR
3DG1213 SILICON NPN TRANSISTOR
3DG1213A SILICON NPN TRANSISTOR
3DG1815 SILICON NPN TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2SC536M(3DG536M) 2SC536KM(3DG536KM) NPN /SILICON NPN TRANSISTOR :。 Purpose: Small signal general purpose amplifier applications. /Absolute Maximum Ratings(Ta=25℃) Symbol Rating Unit VCBO VCEO VEBO 3DG536M 3DG536KM 3DG536M 3DG536KM 40 55 V 30 50 V 5.0 V IC 100 mA ICP 300 mA PC 250 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical Characteristics(Ta=25℃) Symbol Test Condition Min Rating Typ Max Unit ICBO VCB=35V IE=0 1.0 μA IEBO VEB=4.0V IC=0 1.0 μA hFE VCE=6.0V IC=1.0mA 60 960 VCE(sat) IC=50mA IB=5.0mA 0.5 V fT VCE=6.0V IC=1.0mA 100 MHz Cob VCB=6.0V IE=0 f=1.0MHz 3.5 pF CC.rbb′ VCB=6.0V Ic=1.0mA f=31.