LMBT3906DW1T1G
LMBT3906DW1T1G is PNP Transistor manufactured by Leshan Radio Company.
LESHAN RADIO PANY, LTD.
Dual Bias Resistor Transistors
PNP Silicon
The LMBT3906DW1T1G device is a spin- off of our popular SOT- 23/SOT- 323 three- leaded device. It is designed for general purpose amplifier applications and is housed in the SOT- 363 six- leaded surface mount package. By putting two discrete devices in one package , this device is ideal for low- power surface mount applications where board space is at a premium.
- Features
1）h FE, 100- 300 2）Low VCE(sat),≦0.4 V 3）Simplifies Circuit Design 4）Reduces Board Space 5）Reduces ponent Count 6）We declare that the material of product pliant with
Ro HS requirements and Halogen Free. 7）S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
LMBT3906DW1T1G S-LMBT3906DW1T1G
65 4
1 2 3
SOT-363
(3) (2)
(1)
Q1 Q2
(4) (5)
(6)
- DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
A2 3000/Tape&Reel
LMBT3906DW1T3G
A2 10000/Tape&Reel
- MAXIMUM RATINGS(Ta = 25℃)
Parameter
Symbol
Collector- Emitter Voltage
VCEO
Collector- Base...
