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LESHAN RADIO COMPANY, LTD.
Dual Bias Resistor Transistors
PNP Silicon
The LMBT3906DW1T1G device is a spin–off of our popular SOT–23/SOT–323 three–leaded device. It is designed for general purpose amplifier applications and is housed in the SOT–363 six–leaded surface mount package. By putting two discrete devices in one package , this device is ideal for low–power surface mount applications where board space is at a premium.
●FEATURES 1）hFE, 100–300 2）Low VCE(sat),≦0.4 V 3）Simplifies Circuit Design 4）Reduces Board Space 5）Reduces Component Count 6）We declare that the material of product compliant with
RoHS requirements and Halogen Free. 7）S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
LMBT3906DW1T1G Datasheet
