Leshan Radio Company LMBT3906TT1
Transistors
| Part No. | LMBT3906TT1 |
|---|---|
| Datasheet | LMBT3906TT1 Download |
| Manufacturer |  Leshan Radio Company |
| Description | Transistors |
| Buy | Stock & Price |
MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol V CEO V CBO V EBO IC Value – 40 – 40 – 5.0 – 200 Unit Vdc Vdc Vdc mAdc 3 COLLECTOR 1 BASE THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 4 Board(1) T A =25 °C Derate above 25°C Thermal Resistance Junction to Ambient Total Device Dissipation FR-4 Board (2), T A = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature R θJA PD Symbol PD Max 200 1.6 600 300 2.4 R θJA T J , T stg 400 –55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C 2 EMITTER DEVICE MARKING LMBT3906TT1 = 2AELECTRICAL CHARACTERISTICS
(T A = 25°C unless otherwise noted) Characteristic Symbol V (BR)CEO – 40 V (BR)CBO – 40 V (BR)EBO – 5.0 I BL — I CEX — – 50 – 50 nAdc — nAdc — Vdc — Vdc Min Max Unit Vdc OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (3) (I C = –1.0 mAdc, I B = 0) Collector–Base Breakdown Voltage (I C = –10 µAdc, I...
