LMBT3906TT1G
LMBT3906TT1G is General Purpose Transistor manufactured by Leshan Radio Company.
LESHAN RADIO PANY, LTD.
General Purpose Transistors
PNP Silicon
FEATURE
ƽSimplifies Circuit Design. ƽ We declare that the material of product pliance with
Ro HS requirements. ƽ S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
ORDERING INFORMATION
Device
Marking
LMBT3906TT1G S-LMBT3906TT1G LMBT3906TT3G S-LMBT3906TT3G
2A 2A
2A 2A
MAXIMUM RATINGS
Rating Collector- Emitter Voltage
Collector- Base Voltage Emitter- Base Voltage
Collector Current
- Continuous
Shipping 3000/Tape & Reel 10000/Tape & Reel
Symbol V CEO V CBO V EBO IC
Value
- 40
- 40
- 5.0
- 200
Unit Vdc Vdc Vdc m Adc
THERMAL CHARACTERISTICS Characteristic
Total Device Dissipation FR- 4 Board(1) T A =25 °C Derate above 25°C
Thermal Resistance Junction to Ambient Total Device Dissipation FR-4 Board (2), T A = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature
Symbol PD
R θJA...
