Datasheet4U Logo Datasheet4U.com

LMBT3906DW1T3G - PNP Transistor

Download the LMBT3906DW1T3G datasheet PDF. This datasheet also covers the LMBT3906DW1T1G variant, as both devices belong to the same pnp transistor family and are provided as variant models within a single manufacturer datasheet.

Features

  • 1)hFE, 100.
  • 300 2)Low VCE(sat),≦0.4 V 3)Simplifies Circuit Design 4)Reduces Board Space 5)Reduces Component Count 6)We declare that the material of product compliant with RoHS requirements and Halogen Free. 7)S- Prefix for Automotive and Other.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (LMBT3906DW1T1G-LeshanRadioCompany.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number LMBT3906DW1T3G
Manufacturer Leshan Radio Company
File Size 540.36 KB
Description PNP Transistor
Datasheet download datasheet LMBT3906DW1T3G Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
LESHAN RADIO COMPANY, LTD. Dual Bias Resistor Transistors PNP Silicon The LMBT3906DW1T1G device is a spin–off of our popular SOT–23/SOT–323 three–leaded device. It is designed for general purpose amplifier applications and is housed in the SOT–363 six–leaded surface mount package. By putting two discrete devices in one package , this device is ideal for low–power surface mount applications where board space is at a premium. ●FEATURES 1)hFE, 100–300 2)Low VCE(sat),≦0.4 V 3)Simplifies Circuit Design 4)Reduces Board Space 5)Reduces Component Count 6)We declare that the material of product compliant with RoHS requirements and Halogen Free. 7)S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
Published: |