LMBT3906LT1G
LMBT3906LT1G is General Purpose Transistor manufactured by Leshan Radio Company.
LESHAN RADIO PANY, LTD.
General Purpose Transistors
PNP Silicon
- We declare that the material of product pliance with Ro HS requirements.
- S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
LMBT3906LT1G S-LMBT3906LT1G
ORDERING INFORMATION
Device
Marking
LMBT3906LT1G S-LMBT3906LT1G LMBT3906LT3G S-LMBT3906LT3G
2A 2A
2A 2A
Shipping 3000/Tape & Reel 10000/Tape & Reel
MAXIMUM RATINGS Rating
Collector- Emitter Voltage Collector- Base Voltage Emitter- Base Voltage Collector Current
- Continuous
Symbol V CEO V CBO V EBO IC
THERMAL CHARACTERISTICS Characteristic
Total Device Dissipation FR- 5 Board(1) T A =25 °C Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation Alumina Substrate, (2) T A = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature
Symbol PD
RθJA PD
R θJA T J , T stg
DEVICE MARKING LMBT3906LT1G = 2A
Value
- 40
- 40
- 5.0
-...
