Download MAAP-015024 Datasheet PDF
MAAP-015024 datasheet preview
MAAP-015024 page 2
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MAAP-015024 Key Features

  • 8 W Power Amplifier
  • 20 dB Small Signal Gain
  • 39 dBm Saturated Pulsed Output Power
  • Dual Sided Bias Architecture
  • 100% On-wafer DC & RF Power Tested
  • 100% Visual Inspection to MIL-STD-833
  • Bare Die
  • 17.5 GHz GaAs MMIC power amplifier has a saturated pulsed output power of 39 dBm and a small signal gain of 20 dB. The p

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MAAP-015024 Description

The MAAP-015024 three stage 14.5 - 17.5 GHz GaAs MMIC power amplifier has a saturated pulsed output power of 39 dBm and a small signal gain of 20 dB. The power amplifier must be biased directly on both sides of the die. This MMIC uses MA’s GaAs pHEMT device technology and is based upon optical gate lithography to ensure high repeatability and uniformity.