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PH1214-6M - RADAR PULSED POWER TRANSISTOR

Download the PH1214-6M datasheet PDF. This datasheet also covers the PH1214-6M_MA variant, as both devices belong to the same radar pulsed power transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input Impedance Matching Hermetic‘NletalKeramic Package Absolute Maximum Ratings at 25°C UNLESS C-iTRW:SE ‘ICTED. T3LE?ANCES A?E (xI, -- IN’HES =. O”‘j’ I.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PH1214-6M_MA-com.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
PH1214-110M Radar Pulsed Power Transistor - 110 Watts/1.20-1.40 GHz/ 150ms Pulse/ 10% Duty Tyco Electronics
PH1214-12M Radar Pulsed Power Transistor - 12 Watts/1.20-1.40 GHz/ 150 mS Pulse/ 10% Duty Tyco Electronics
PH1214-220M Radar Pulsed Power Transistor - 220 Watts/1.20-1.40 GHz/ 150ms Pulse/ 10% Duty Tyco Electronics
PH1214-25M Radar Pulsed Power Transistor - 25 Watts/ 1.20-1.40 GHz/ 150mS Pulse/ 10% Duty Tyco Electronics
PH1214-2M Radar Pulsed Power Transistor/ 2W/ loops Pulse/ 10% Duty 1.2 - 1.4 GHz Tyco Electronics

Other Datasheets by MACOM Technology Solutions

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
an AMP company Radar Pulsed Power Transistor, SW, loops Pulse, 10% Duty PHI 214-6M 1.2 - 1.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input Impedance Matching Hermetic‘NletalKeramic Package Absolute Maximum Ratings at 25°C UNLESS C-iTRW:SE ‘ICTED. T3LE?ANCES A?E (xI, -- IN’HES =.O”‘j’ I IMETERS ; 13yy’ I Electrical Characteristics Parameter at 25°C Symbol Min Max Units Test Conditions Collector-Emitter Breakdown Voltage Collector-Emitterleakage Thermal Resistance Output Power Power Gain Collector Efficiency Input Return Loss Load Mismatch Tolerance Load Mismatch Stablility Current BV,,, ICES RW(X) PO”T GP ‘lC 65 1.