MACOM Technology Solutions 2N6675
NPN High Power Silicon Transistor
| Part No. | 2N6675 |
|---|---|
| Datasheet | 2N6675 Download |
| Manufacturer |  MACOM Technology Solutions |
| Description | NPN High Power Silicon Transistor |
| Buy | Stock & Price |
FEATURES
● Available in JAN, JANTX, JANTXV per MIL-PRF-19500/537● TO-3 (TO-204AA) Package Rev. V1
ELECTRICAL CHARACTERISTICS
Parameter Off Characteristics Collector - Emitter Breakdown Voltage Test Conditions IC = 200 mAdc 2N6674 2N6675 Symbol Units Min. V(BR)CEO Vdc 300 400 Collector - Emitter Cutoff Current Emitter - Base Cutoff Current Collector - Base Cutoff Current On Characteristics1 Forward Current Transfer Ratio Collector - Emitter Sustaining Voltage Base - Emitter Saturation Voltage Dynamic Characteristics Small-Signal Short-Circuit Forward Current Transfer Ratio VCE = 450 Vdc, VBE = -1.5 Vdc, 2N6674 VCE = 650 Vdc, VBE = -1.5 Vdc, 2N6675 VEB = 7 Vdc VCB = 450 Vdc, 2N6674 ICEX Adc IEBO mAdc ICBO mAdc — — — IC = 1 Adc, VCE = 3 Vdc IC = 10 Adc, VCE = 2 Vdc IC = 10 Adc, IB = 2 Adc IC = 15 Adc, IB = 5 Adc IC = 1 Adc, IB = 2 Adc HFE VCE(SAT) Vdc VBE(SAT) Vdc 15 8 — — IC = 0.5 Adc, VCE = 10 Vdc, f = 1 kHz
