Datasheet Details
| Part number | 2N6675 |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 228.35 KB |
| Description | NPN SILICON POWER TRANSISTOR |
| Datasheet | 2N6675 2N6674 Datasheet (PDF) |
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Overview: 2N6674 2N6675 NPN SILICON POWER TRANSISTOR w w w. c e n t r a l s e m i .
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | 2N6675 |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 228.35 KB |
| Description | NPN SILICON POWER TRANSISTOR |
| Datasheet | 2N6675 2N6674 Datasheet (PDF) |
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: The CENTRAL SEMICONDUCTOR 2N6674, 2N6675 types are NPN Silicon Triple Diffused Mesa Power Transistors designed for high voltage switching applications.
MARKING: FULL PART NUMBER TO-3 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCEV VCEO VEBO IC ICM IB PD TJ, Tstg ΘJC 2N6674 450 2N6675 650 300 400 7.0 15 20 5.0 175 -65 to +200 1.0 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICEV VCE=Rated VCEV, VBE=1.5V ICEV VCE=Rated VCEV, VBE=1.5V, TC=100°C IEBO VEB=7.0V BVCEO IC=200mA (2N6674) 300 BVCEO IC=200mA (2N6675) 400 VCE(SAT) IC=10A, IB=2.0A VCE(SAT) IC=10A, IB=2.0A, TC=100°C VCE(SAT) IC=15A, IB=5.0A VBE(SAT) IC=10A, IB=2.0A hFE VCE=2.0V, IC=10A 8.0 IS/b VCE=30V, IC=5.9A 1.0 IS/b VCE=100V, IC=250mA 1.0 hfe VCE=10V, IC=1.0A, f=5.0MHz 3.0 ft VCE=10V, IC=1.0A, f=5.0MHz 15 Cob VCB=10V, IE=0, f=100kHz 150 MAX 0.1 1.0 2.0 1.0 2.0 5.0 1.5 20 10 50 500 UNITS V V V A A A W °C °C/W UNITS mA mA mA V V V V V V s s MHz pF R1 (10-March 2011) 2N6674 2N6675 NPN SILICON POWER TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX td* VEB=6.0V, IC=10A, IB=2.0A 0.1 tr* VEB=6.0V, IC=10A, IB=2.0A 0.6 tr* VEB=6.0V, IC=10A, IB=2.0A, TC=100°C 1.0 ts* VEB=6.0V, IC=10A, IB1=IB2=2.0A 2.5 ts* VEB=6.0V, IC=10A, IB1=IB2=2.0A, TC=100°C 4.0 tf* VEB=6.0V, IC=10A, IB1=IB2=2.0A 0.5 tf* VEB=6.0V, IC=10A, IB1=IB2=2.0A, TC=100°C 1.0 * VCC=135V, tp=20µs TO-3 CASE - MECHANICAL OUTLINE UNITS µs µs µs µs µs µs µs w w w.
c e n t r a l s e m i .
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2N6675 | NPN POWER SILICON TRANSISTOR | Microsemi Corporation |
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2N6675 | (2N6674 / 2N6675) Silicon Power Transistor | SavantIC |
 |
2N6675 | NPN High Power Silicon Transistor | MA-COM |
 |
2N6675 | Bipolar NPN Device | Seme LAB |
 |
2N6675 | NPN High Power Silicon Transistor | VPT |
| Part Number | Description |
|---|---|
| 2N6676 | NPN SILICON POWER TRANSISTOR |
| 2N6677 | NPN SILICON POWER TRANSISTOR |
| 2N6678 | NPN SILICON POWER TRANSISTOR |
| 2N6609 | COMPLEMENTARY SILICON POWER TRANSITORS |
| 2N6648 | PNP silicon power darington transistor |
| 2N6649 | PNP silicon power darington transistor |
| 2N6650 | PNP silicon power darington transistor |
| 2N6027 | SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS |
| 2N6028 | SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS |
| 2N6031 | PNP SILICON POWER TRANSISTOR |