MACOM Technology Solutions CMPA5259080S
The CMPA5259080S is a gallium nitride (GaN) high electron mobility transistor (HEMT) based monolithic microwave integrated circuit (MMIC). This MMIC contains a two-stage reactively matched amplifier design approach enabling high power and power added efficiency to be achieved in a 7 mm x 7 mm surface mount (QFN package). Thermal Characteristics Parameter Symbol Rating Units Conditions Operating Junction Temperature TJ 225 °C Thermal Resistance, Junction to Case (Packaged)1 RθJC 0.95 °C/W Pulse Width = 500 μs, Duty Cycle = 20% Note: 2 1 Simulated for the CMPA5259080S at PDISS = 120 W.| Part No. | CMPA5259080S |
|---|---|
| Datasheet | CMPA5259080S Download |
| Manufacturer |  MACOM Technology Solutions |
| Description | Power Amplifier |
| Buy | Stock & Price |
DESCRIPTION
GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. Package Types: 7 x 7 QFN PN’s: CMPA5259080SFEATURES
● >48% typical power added efficiency● 29 dB small signal gain
● 110 W typical PSAT
● Operation up to 40 V
● High breakdown voltage
● High temperature operation
APPLICATIONS
● Civil and military pulsed radar amplifiers Note:FEATURES
are typical performance across frequency under 25 °C operation. Please reference performance charts for additional details. Typical Performance Over 5.2 - 5.9 GHz (TC = 25 °C) Parameter Small Signal Gain1,2 Output Power1,3 Power Gain1,3 Power Added Efficiency1,3 5.2 GHz 29.0 112.9 21.4 47 5.5 GHz 30.5 112.5 21.4 49 Notes: 1 VDD = 40 V, IDQ = 350 mA. 2 Measured at PIN = -20 dBm. 3 Measured at PIN = 29 dBm and 500 μs, duty cycle = 20%.
