MX25L25635E
MX25L25635E is FLASH MEMORY manufactured by Macronix.
FEATURES
GENERAL
- Serial Peripheral Interface patible -- Mode 0 and Mode 3
- 268,435,456 x 1 bit structure or 134,217,728 x 2 bits (two I/O mode) structure or 67,108,864 x 4 bits (four I/O mode) structure
- 8192 Equal Sectors with 4K bytes each
- Any Sector can be erased individually
- 1024 Equal Blocks with 32K bytes each
- Any Block can be erased individually
- 512 Equal Blocks with 64K bytes each
- Any Block can be erased individually
- Power Supply Operation
- 2.7 to 3.6 volt for read, erase, and program operations
- Latch-up protected to 100m A from -1V to Vcc +1V
PERFORMANCE
- High Performance
VCC = 2.7~3.6V
- Normal read
- 50MHz
- Fast read
- 1 I/O: 80MHz with 8 dummy cycles
- 2 I/O: 70MHz with 4 dummy cycles
- 4 I/O: 70MHz with 6 dummy cycles
- Fast program time: 1.4ms(typ.) and 5ms(max.)/page (256-byte per page)
- Byte program time: 9us (typical)
- Continuously Program mode (automatically increase address under word program mode)
- Fast erase time: 60ms (typ.)/sector (4K-byte per sector) ; 0.5s(typ.) /block (32K-byte per block); 0.7s(typ.) /block (64K-byte per block); 160s(typ.) /chip
- Low Power Consumption
- Low active read current: 45m A(max.) at 80MHz, 40m A(max.) at 70MHz and 30m A(max.) at 50MHz
- Low active programming current: 25m A (max.)
- Low active erase current: 25m A (max.)
- Standby current: 200u A (max.)
- Deep power down current: 80u A (max.)
- Typical 100,000 erase/program cycles
SOFTWARE FEATURES
- Input Data Format
- 1-byte mand code
- Advanced Security Features
- BP0-BP3 block group protect
- Flexible individual block protect when OTP WPSEL=1
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