• Part: MX25L25635E
  • Description: FLASH MEMORY
  • Manufacturer: Macronix
  • Size: 3.24 MB
Download MX25L25635E Datasheet PDF
Macronix
MX25L25635E
MX25L25635E is FLASH MEMORY manufactured by Macronix.
FEATURES GENERAL - Serial Peripheral Interface patible -- Mode 0 and Mode 3 - 268,435,456 x 1 bit structure or 134,217,728 x 2 bits (two I/O mode) structure or 67,108,864 x 4 bits (four I/O mode) structure - 8192 Equal Sectors with 4K bytes each - Any Sector can be erased individually - 1024 Equal Blocks with 32K bytes each - Any Block can be erased individually - 512 Equal Blocks with 64K bytes each - Any Block can be erased individually - Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations - Latch-up protected to 100m A from -1V to Vcc +1V PERFORMANCE - High Performance VCC = 2.7~3.6V - Normal read - 50MHz - Fast read - 1 I/O: 80MHz with 8 dummy cycles - 2 I/O: 70MHz with 4 dummy cycles - 4 I/O: 70MHz with 6 dummy cycles - Fast program time: 1.4ms(typ.) and 5ms(max.)/page (256-byte per page) - Byte program time: 9us (typical) - Continuously Program mode (automatically increase address under word program mode) - Fast erase time: 60ms (typ.)/sector (4K-byte per sector) ; 0.5s(typ.) /block (32K-byte per block); 0.7s(typ.) /block (64K-byte per block); 160s(typ.) /chip - Low Power Consumption - Low active read current: 45m A(max.) at 80MHz, 40m A(max.) at 70MHz and 30m A(max.) at 50MHz - Low active programming current: 25m A (max.) - Low active erase current: 25m A (max.) - Standby current: 200u A (max.) - Deep power down current: 80u A (max.) - Typical 100,000 erase/program cycles SOFTWARE FEATURES - Input Data Format - 1-byte mand code - Advanced Security Features - BP0-BP3 block group protect - Flexible individual block protect when OTP WPSEL=1 P/N:...