MX35UF2GE4AC-J
FEATURES
- 2Gb Serial Flash
- Bus: x4
- Page size: (2048+64) byte,
- Block size: (128K+4K) byte
- Fast Read Access
- Supports Random data read out by x1 x2 & x4 modes, (1-1-1,1-1-2, 1-1-4, 1-2-2, 1-4-4)Note 1
- Latency of array to register: 80us
- Frequency: 104MHz
- Continuous read supported
- Page Program Operation
- Page program time: 360us(typ.)
- Block Erase Operation
- Block erase time: 1ms (typ.)
- Single Voltage Operation:
- VCC: 1.7 to 1.95V
- BP bits for block group protection
MX35UF2GE4AC
- J Grade 1.8V, 2Gb Serial NAND Flash Memory
- Unique ID Read
- Low Power Dissipation
- Max 40m A
Active current (Read/Program/Erase)
- Standby Mode
- 200u A (Max) standby current
- High Reliability Note 2
- Program / Erase Endurance: Typical 100K cycles with 8-bit ECC per (512+16) Byte
- Flexible ECC Bit Flip Threshold Setting by user
- Data Retention: 10 years
- BBM Table (Bad Block Table) supported
- Wide Temperature Operating Range...