Description
SOT23-6L
Package dissipation rating
Package SOT-23 (6)
RθJA（℃/W） 108.1
Absolute maximum ratings
Parameter VDD to GND IN, INB to GND N_OUT to GND P_OUT to GND Junction temperature Storage temperature, Tstg Leading temperature （soldering，10secs）
ESD Susceptibility HBM
Value -0.3 to 20V -0.3 to 2
Features
- necessary to drive low-side enhancement mode Gallium Nitride (GaN) FETs. The MX5114T provides inverting and noninverting inputs to satisfy requirements for inverting and noninverting gate drive in a single device type. The inputs of the MX5114 are TTL/CMOS Logic compatible and withstand input voltages up to 18 V regardless of the VDD voltage. The MX5114T has split gate outputs, providing flexibility to adjust the turn on and turn off strength independently. The MX5114T has fast switching speed a.
MX5114T Datasheet
