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MSC9926W - Dual N-Channel Enhancement Mode Power MOS FET

Features

  • VDS =20V,ID =6A RDS(ON) < 28m Ω @ VGS=4.5V RDS(ON) < 37mΩ @ VGS=2.5V.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current Lead Free.

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Datasheet Details

Part number MSC9926W
Manufacturer MORESEMI
File Size 612.48 KB
Description Dual N-Channel Enhancement Mode Power MOS FET
Datasheet download datasheet MSC9926W Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MSC9926W 20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET General Features ● VDS =20V,ID =6A RDS(ON) < 28m Ω @ VGS=4.5V RDS(ON) < 37mΩ @ VGS=2.
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