Datasheet Summary
20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET
General Features
- VDS =20V,ID =6A RDS(ON) < 28m Ω @ VGS=4.5V RDS(ON) < 37mΩ @ VGS=2.5V
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
Lead Free
Application
- Power switching application
- Hard switched and high frequency circuits
- Uninterruptible power supply
PIN Configuration
Marking and pin Assignment
SOP-8 top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
SOP-8
Reel Size Ø330mm
Tape width 12mm
Quantity 2500...