M2006C Datasheet | MOS

.. (PTY) LTD. M2006C PIR Motion Detector Microsystems On Silicon Member of ELMOS Semiconductor AG General Description___________ The M2006C integrated circuit bines all required functions for a single chip Passive Infra Red (PIR) motion detector. A relay and a LED output are provided for interfacing to an occupancy detect or alarm system. One or two PIR sensors connect directly to the PIR inputs. The pull-down resistors and DC decoupling circuitry are integrated on chip. The PIR signal is converted to a 15 bit digital value. The parameters for sensitivity, pulse count and timing are set by means of connecting the corresponding inputs to VDD, VSS or leaving them open. The voltage level on the temperature pensation input is converted to a digital value with 4 bit resolution. All signal processing is performed digitally. Applications_________________ - - - - PIR motion detection Intruder detection Occupancy detection Motion sensor lights Features_____________________ - Digital signal processing - On chip supply regulator with wide operating voltage range - Low power consumption - Temperature pensation input - Differential PIR sensor input - Selectable relay output polarity - Selectable pulse count and timing algorithm for motion detection Single Sensor Application Circuit________________________________ U1 14 VSSA VB 10 C1 D1 Supply C2 11 12 VDDA PIRIN LED 20 L1 Alarm R2 RE1 IRA1 RELAY 13 NPIRIN VDD Alarm 2 1 T hre shold /Sensitivity PT0 5 PT1 4 OSC PT0 SENS PT1 RPOL R1 N ear...