MX29L1611 Datasheet | Macronix

FEATURES - Regulated voltage range 3.0 to 3.6V write, erase and read(MX29L1611-75/10/12) - Fast random access/page mode access time: 75/ 30ns, 100/30ns, 120/30ns. .. - Full voltage range 2.7 to 3.6V write, erase and read (MX29L1611-90) - Fast random access/page mode access time: 90/ 35ns - Endurance: 10,000 cycles - Page access depth: 16 bytes/8 words, page address A0, A1, A2 - Sector erase architecture - 32 equal sectors of 64k bytes each - Sector erase time: 200ms typical - Auto Erase and Auto Program Algorithms - Automatically erases any one of the sectors or the whole chip with Erase Suspend capability - Automatically programs and verifies data at specified addresses Status Register feature for detection of program or erase cycle pletion Low VCC write inhibit < 1.8V Software and hardware data protection Page program operation - Internal address and data latches for 128 bytes/64 words per page - Page programming time: 5ms typical Low power dissipation - 50m A active current - 20u A standby current Two independently Protected sectors Industry standard surface mount packaging - 44 lead SOP, 48 TSOP(I) - - - - - - - GENERAL DESCRIPTION The MX29L1611 is a 16-mega bit pagemode Flash memory organized as either 1M wordx16 or 2M bytex8. The MX29L1611 includes 32 sectors of 64KB(65,536 Bytes or 32,768 words). MXIC's Flash memories offer the most cost-effective and reliable read/write nonvolatile random access memory and fast page mode access. The MX29L1611 is packaged 44-pin SOP and 48-TSOP(I). It is designed to be reprogrammed and erased in-system or in-standard EPROM programmers. The standard MX29L1611 offers access times as fast as 100ns,allowing operation of high-speed microprocessors without wait. To eliminate bus contention, the MX29L1611 has separate chip enable CE, output enable (OE), and write enable (WE) controls. MXIC's Flash memories augment EPROM functionality with in-circuit electrical erasure and programming. The MX29L1611 uses a mand register to manage...