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MX29L1611G - CMOS SINGLE VOLTAGE FLASH EEPROM

Description

The MX29L1611G is a 16-mega bit Flash memory organized as either 1M wordx16 or 2M bytex8.

The MX29L1611G includes 32 sectors of 64KB(65,536 Bytes or 32,768 words).

MXIC's Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory.

Features

  • 3.3V ± 10% for write and read operation 11V Vpp erase/programming operation Endurance: 100 cycles Fast random access time: 90ns/100ns/120ns Fast page access time: 30ns (Only for 29L1611PC-90/ www. DataSheet4U. com 10/12).
  • Sector erase architecture - 32 equal sectors of 64k bytes each - Sector erase time: 200ms typical.
  • Auto Erase and Auto Program Algorithms - Automatically erases any one of the sectors or the whole chip - Automatically programs and verifies data at specified addr.

📥 Download Datasheet

Datasheet Details

Part number MX29L1611G
Manufacturer Macronix
File Size 335.97 KB
Description CMOS SINGLE VOLTAGE FLASH EEPROM
Datasheet download datasheet MX29L1611G Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ADVANCED INFORMATION MX29L1611G / MX29L1611* 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES 3.3V ± 10% for write and read operation 11V Vpp erase/programming operation Endurance: 100 cycles Fast random access time: 90ns/100ns/120ns Fast page access time: 30ns (Only for 29L1611PC-90/ www.DataSheet4U.com 10/12) • Sector erase architecture - 32 equal sectors of 64k bytes each - Sector erase time: 200ms typical • Auto Erase and Auto Program Algorithms - Automatically erases any one of the sectors or the whole chip - Automatically programs and verifies data at specified addresses • • • • • • Status Register feature for detection of program or erase cycle completion • Low VCC write inhibit is equal to or less than 1.
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