MX29L3211 Datasheet | Macronix

FEATURES - 3.3V ± 10% write, erase and read - Endurance: 10,000 cycles - Fast random access time: 100ns/120ns - Fast pagemode access time: 50ns .. - Page access depth: 16 bytes/8 words - Sector erase architecture - 32 equal sectors of 64K word each - Sector erase time: 200ms typical - Auto Erase and Auto Program Algorithms - Automatically erases any one of the sectors or the whole chip with Erase Suspend capability - Automatically programs and verifies data at specified addresses - Status Register feature for detection of program or erase cycle pletion - Low VCC write inhibit is equal to or less than 1.8V - Software data protection - Page program operation - Internal address and data latches for 256 bytes/128 words per page - Page programming time: 5ms typical - Low power dissipation - 50m A active current - 20u A standby current - Two independently Protected sectors - Industry standard surface mount packaging - 44 pin SOP (500mil) - 48 TSOP(I) GENERAL DESCRIPTION The MX29L3211 is a 32-mega bit pagemode Flash memory organized as either 4M word x 8 or 2M byte x 16. The MX29L3211 includes 32 sectors of 64K words. MXIC's Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory and fast page mode access. The MX29L3211 is packaged 44-pin SOP and 48-pin TSOP. It is designed to be reprogrammed and erased in-system or in-standard EPROM programmers. The standard MX29L3211 offers access times as fast as 100ns,allowing operation of high-speed microprocessors without wait. To eliminate bus contention, the MX29L3211 has separate chip enable CE, output enable (OE), and write enable (WE) controls. MXIC's Flash memories augment EPROM functionality with in-circuit electrical erasure and programming. The MX29L3211 uses a mand register to manage this functionality. To allow for simple in-system reprogrammability, the MX29L3211 does not require high input voltages for programming. Three-volt-only mands determine the operation of the device....