• Part: MX25L51245G-J
  • Description: 3V 512M-BIT CMOS FLASH MEMORY
  • Manufacturer: Macronix
  • Size: 1.21 MB
Download MX25L51245G-J Datasheet PDF
Macronix
MX25L51245G-J
MX25L51245G-J is 3V 512M-BIT CMOS FLASH MEMORY manufactured by Macronix.
Features - J Grade (Temperature = -40°C to 105°C) - 2.7 to 3.6 volt for read, erase, and program operations - Multi I/O Support - Single I/O, Dual I/O and Quad I/O - Enhanced Program and Erase performance (for increased factory production throughput) MX25L51245G (J Grade) 1. FEATURES 3V 512M-BIT [x 1/x 2/x 4] CMOS MXSMIO (SERIAL MULTI I/O) FLASH MEMORY GENERAL - Supports Serial Peripheral Interface -- Mode 0 and Mode 3 - Single Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations - 512Mb: 536,870,912 x 1 bit structure or 268,435,456 x 2 bits (two I/O mode) structure or 134,217,728 x 4 bits (four I/O mode) structure - Protocol Support - Single I/O, Dual I/O and Quad I/O - Latch-up protected to 100m A from -1V to Vcc +1V - Fast read for SPI mode - Support clock frequency up to 166MHz for all protocols - Support Fast Read, 2READ, DREAD, 4READ, QREAD instructions - Support DTR (Double Transfer Rate) Mode - Configurable dummy cycle number for fast read operation - Quad Peripheral Interface (QPI) available - Equal Sectors with 4K byte each, or Equal Blocks with 32K byte each or Equal Blocks with 64K byte each - Any Block can be erased individually - Programming : - 256byte page buffer - Quad Input/Output page program(4PP) to enhance program performance - Typical 100,000 erase/program cycles - 20 years data retention SOFTWARE FEATURES - Input Data Format - 1-byte mand code - Advanced Security Features - Block lock protection The BP0-BP3 and T/B status bits define the size of the area to be protected against program and erase instructions - Advanced sector protection function (Solid and Password Protect) - Additional 4K bit security OTP - Features unique...