• Part: BUZ907P
  • Description: N-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: Magna Tec
  • Size: 48.30 KB
Download BUZ907P Datasheet PDF
Magna Tec
BUZ907P
BUZ907P is N-Channel MOSFET manufactured by Magna Tec.
FEATURES - HIGH SPEED SWITCHING - SEMEFAB DESIGNED AND DIFFUSED - HIGH VOLTAGE (220V & 250V) - HIGH ENERGY RATING - ENHANCEMENT MODE - INTEGRAL PROTECTION DIODES - PLIMENTARY N- CHANNEL BUZ902P & BUZ903P 0.40 (0.016) 0.79 (0.031) 19.81 (0.780) 20.32 (0.800) 1.01 (0.040) 1.40 (0.055) 2.21 (0.087) 2.59 (0.102) 5.25 ( 0.215) BSC TO-247 Pin 1 - Gate .. Pin 2 - Source Case- Source Pin 3 - Drain ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDSX Drain - Source Voltage VGSS ID ID(PK) PD Tstg Tj RθJC Gate - Source Voltage Continuous Drain Current Body Drain Diode Total Power Dissipation Storage Temperature Range Maximum Operating Junction Temperature Thermal Resistance Junction - Case @ Tcase = 25°C BUZ907P -220V ±14V -8A -8A 125W - 55 to 150°C 150°C 1°C/W BUZ908P -250V Magnatec. Telephone (01455) 554711. Fax (01455) 558843 Prelim. 01/97 MAGNA Characteristic BVDSX BVGSS VGS(OFF) VDS(SAT)- RDS(on)- BUZ907P BUZ908P STATIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Test Conditions BUZ907P BUZ908P IG = ±100µA ID = -100m A ID = -8A ID = -8A VDS = -220V IDSX Drain - Source Cut- Off Current VGS = 10V BUZ907P VDS = -250V BUZ908P yfs- Forward Transfer Admittance VDS = -10V ID = -3A 0.7 2 S -10 m A ID = -10m A Gate - Source Breakdown Voltage VDS = 0...