BUZ907P
BUZ907P is N-Channel MOSFET manufactured by Magna Tec.
FEATURES
- HIGH SPEED SWITCHING
- SEMEFAB DESIGNED AND DIFFUSED
- HIGH VOLTAGE (220V & 250V)
- HIGH ENERGY RATING
- ENHANCEMENT MODE
- INTEGRAL PROTECTION DIODES
- PLIMENTARY N- CHANNEL BUZ902P & BUZ903P
0.40 (0.016) 0.79 (0.031)
19.81 (0.780) 20.32 (0.800)
1.01 (0.040) 1.40 (0.055)
2.21 (0.087) 2.59 (0.102)
5.25 ( 0.215) BSC
TO-247
Pin 1
- Gate
..
Pin 2
- Source Case- Source
Pin 3
- Drain
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C unless otherwise stated) VDSX Drain
- Source Voltage VGSS ID ID(PK) PD Tstg Tj RθJC Gate
- Source Voltage Continuous Drain Current Body Drain Diode Total Power Dissipation Storage Temperature Range Maximum Operating Junction Temperature Thermal Resistance Junction
- Case @ Tcase = 25°C BUZ907P -220V ±14V -8A -8A 125W
- 55 to 150°C 150°C 1°C/W BUZ908P -250V
Magnatec.
Telephone (01455) 554711. Fax (01455) 558843
Prelim. 01/97
MAGNA
Characteristic
BVDSX BVGSS VGS(OFF) VDS(SAT)- RDS(on)-
BUZ907P BUZ908P
STATIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Test Conditions
BUZ907P BUZ908P IG = ±100µA ID = -100m A ID = -8A ID = -8A VDS = -220V IDSX Drain
- Source Cut- Off Current VGS = 10V BUZ907P VDS = -250V BUZ908P yfs- Forward Transfer Admittance VDS = -10V ID = -3A 0.7 2 S -10 m A ID = -10m A Gate
- Source Breakdown Voltage VDS = 0...