BUZ907D
BUZ907D is P-CHANNEL POWER MOSFET manufactured by Magna.
FEATURES
- HIGH SPEED SWITCHING
- SEMEFAB DESIGNED AND DIFFUSED
- HIGH VOLTAGE (220V & 250V)
- HIGH ENERGY RATING
R 4.0 ± 0.1
R 4.4 ± 0.2
- ENHANCEMENT MODE
- INTEGRAL PROTECTION DIODES
- PLIMENTARY N- CHANNEL BUZ902D & BUZ903D Case
- Source
TO- 3
Pin 1
- Gate Pin 2
- Drain
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C unless otherwise stated) VDSX Drain
- Source Voltage VGSS ID ID(PK) PD Tstg Tj RθJC Gate
- Source Voltage Continuous Drain Current Body Drain Diode Total Power Dissipation Storage Temperature Range Maximum Operating Junction Temperature Thermal Resistance Junction
- Case @ Tcase = 25°C BUZ907D -220V ±14V -16A -16A 250W
- 55 to 150°C 150°C 0.5°C/W BUZ908D -250V
Magnatec.
Telephone (01455) 554711. Fax (01455) 552612.
Prelim. 01/97
MAGNA
Characteristic
BVDSX BVGSS VGS(OFF) VDS(SAT)- RDS(on)-
BUZ907D BUZ908D
STATIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Test Conditions
BUZ907D BUZ908D IG = ±100µA ID = -100m A ID = -16A ID = -16A VDS = -220V IDSX Drain
- Source Cut- Off Current VGS = 10V BUZ907D VDS = -250V BUZ908D yfs- Forward Transfer Admittance VDS = -10V ID = -3A 0.7 4 S -10 m A ID = -10m A Gate
- Source Breakdown Voltage VDS = 0 Gate
- Source Cut- Off Voltage Drain
- Source Saturation Voltage Static
- Source Resistance VDS = -10V VGD = 0 VGS = -10
Min.
-220 -250 ±14...
