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MBQ50T65FESC - IGBT

Description

This IGBT is produced using advanced Magnachip’s Field Stop Trench IGBT Technology, which provides high switching series and excellent quality.

This device is for PFC, UPS & Inverter applications.

Features

  • High Speed Switching & Low Power Loss.
  • VCE(sat) = 1.85V @ IC = 50A.
  • Eoff = 0.55mJ @ TC = 25°C.
  • High Input Impedance.
  • trr = 80ns (typ. ) @diF/dt = 1000A/ μs.
  • Maximum junction temperature 175°C.

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Datasheet Details

Part number MBQ50T65FESC
Manufacturer MagnaChip
File Size 782.67 KB
Description IGBT
Datasheet download datasheet MBQ50T65FESC Datasheet
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MBQ50T65FESC 650V Field Stop IGBT General Description This IGBT is produced using advanced Magnachip’s Field Stop Trench IGBT Technology, which provides high switching series and excellent quality. This device is for PFC, UPS & Inverter applications. TO-247 MBQ50T65FESC 650V Field Stop IGBT Features  High Speed Switching & Low Power Loss  VCE(sat) = 1.85V @ IC = 50A  Eoff = 0.55mJ @ TC = 25°C  High Input Impedance  trr = 80ns (typ.
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